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Conductive Nb Doped SrTiO3 Wafer Technical Ceramic Parts 5 X 5 Mm Diameter 25Mm

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Conductive Nb Doped SrTiO3 Wafer Technical Ceramic Parts 5 X 5 Mm Diameter 25Mm

Brand Name : ZG

Model Number : MS

Certification : CE

Place of Origin : CHINA

MOQ : 1 piece

Price : USD10/piece

Payment Terms : L/C, D/A, D/P, T/T, Western Union, MoneyGram

Supply Ability : 10000 pieces per month

Delivery Time : 3 working days

Packaging Details : Strong wooden box for Global shipping

Application : High Tc Superconductor Microelectronics device Optoelectronics device Microwave device

Diameter : Ø 1"

Thickness : 0.5 mm / 1 mm

Grade : Production grade / Research grade

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SrTiO3 Wafer and conductive Nb doped SrTiO3 wafer with size from 5 x 5 mm to diameter 25 mm

We can provide both single crystal SrTiO3 wafer and conductive Nb doped SrTiO3 wafer with size from 5 x 5 mm to diameter 25 mm . With excellent physical and mechanical properties , SrTiO3 has twin free crystal structure and it's lattice contant can perfectly match to the common superconductor materials . Pure SrTiO3 substrate is the best choice for your high Tc superconductor application , conductive SrTiO3 wafer can be as an electrode for certain thin film / device applications , single crystal SrTiO3 can exhibit electric conductive by doping Nb ( Niobium ) , different doped concentration ( 0.1 ~ 1 wt% ) will change resistivity range from 0.001 to 0.1 ohm-cm , and this will be of benefit to some thin film application . Please contact us for more product information .

SrTiO3 Wafer Application

High Tc Superconductor Microelectronics device
Optoelectronics device Microwave device

SrTiO3 Wafer Properties

Chemical formula SrTiO3
Crystal structure Cubic
Lattice constant 3.905 A
Dielectric constant 300
Thermal expansion 10.4
Density 5.175

Product Specification

Growth Flame fusion ( Verneuil ) method
Diameter Ø 1"
Size 5 x 5 / 10 x 10 / 20 x 20 mm
Thickness 0.5 mm / 1 mm
Orientation <100> / <110> / <111>
Surface one side polished / two sides polished
TTV <= 10 um
Roughness Ra <= 5 A
Package Membrance box

Conductive Nb doped SrTiO3 Wafer

Single crystal SrTiO3 can exhibit electric conductive by doping Nb element , different doped concentration will change resistivity range from 0.001 to 0.1 ohm-cm , and this will be of benefit to some thin film growth application .

Growth Flame fusion ( Verneuil ) method
Diameter Ø 1"
Size 5 x 5 / 10 x 10 / 20 x 20 mm
Thickness 0.5 mm / 1 mm
Orientation <100> / <110> / <111>
Dopant Nb ( Niobium )
Concentration 0.7 wt %
Resistivity ~ 0.007 ohm-cm
Mobility ~ 8.5 cm2 / v.s.
Surface one side polished / two sides polished
TTV <= 10 um
Roughness Ra <= 5 A
Package Membrance box

Product Tags:

SrTiO3 Wafer Technical Ceramic Parts

      

5 X 5 Mm SrTiO3 Wafer

      

25Mm SrTiO3 Wafer

      
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